Datasheet4U Logo Datasheet4U.com

MT47H64M16 - DDR2 SDRAM

Download the MT47H64M16 datasheet PDF. This datasheet also covers the MT47H256M4 variant, as both devices belong to the same ddr2 sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Features.
  • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible).
  • Differential data strobe (DQS, DQS#) option.
  • 4n-bit prefetch architecture.
  • Duplicate output strobe (RDQS) option for x8.
  • DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CAS latency (CL).
  • Posted CAS additive latency (AL).
  • WRITE latency = READ latency - 1 tCK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT47H256M4_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MT47H128M16 (MT47HxxxMxx) DDR2 SDRAM Micron
MT47H256M8 (MT47HxxxMxx) DDR2 SDRAM Micron
MT47H512M4 (MT47HxxxMxx) DDR2 SDRAM Micron
MT4761B01-1 LCD Module CSOT
MT4067-P 256K x 1 DRAM Micron

Other Datasheets by Micron Technology

Part Number Description
MT47H64M4 (MT47HxxMx) DDR2 SDRAM
MT47H64M8 DDR2 SDRAM
MT47H128M4 DDR2 SDRAM
MT47H128M8 DDR2 SDRAM
MT47H16M16 (MT47HxxMx) DDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks 1Gb: x4, x8, x16 DDR2 SDRAM Features Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.