MT47H64M4 - (MT47HxxMx) DDR2 SDRAM

Description

Features

VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 configuration DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Programmable CAS Latency (CL): 3 and 4 Posted CAS addi.

Micron Technology

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Datasheet Details

Part number	MT47H64M4
Manufacturer	Micron Technology
File Size	6.81 MB
Description	(MT47HxxMx) DDR2 SDRAM
Datasheet	MT47H64M4 Datasheet
Additional preview pages of the MT47H64M4 datasheet.

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www.DataSheet4U.com 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM Features • • • • • • • • • • • • • • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC standard 1.

Published: Sep 7, 2007 |