• Part: MT47H64M16
  • Description: DDR2 SDRAM
  • Manufacturer: Micron Technology
  • Size: 9.35 MB
Download MT47H64M16 Datasheet PDF
Micron Technology
MT47H64M16
MT47H64M16 is DDR2 SDRAM manufactured by Micron Technology.
- Part of the MT47H256M4 comparator family.
Features Features - VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V - JEDEC-standard 1.8V I/O (SSTL_18-patible) - Differential data strobe (DQS, DQS#) option - 4n-bit prefetch architecture - Duplicate output strobe (RDQS) option for x8 - DLL to align DQ and DQS transitions with CK - 8 internal banks for concurrent operation - Programmable CAS latency (CL) - Posted CAS additive latency (AL) - WRITE latency = READ latency - 1 t CK - Selectable burst lengths (BL): 4 or 8 - Adjustable data-output drive strength - 64ms, 8192-cycle refresh - On-die termination (ODT) - Industrial temperature (IT) option - Automotive temperature (AT) option - Ro HS-pliant - Supports JEDEC clock jitter specification Options1 - Configuration - 256 Meg x 4 (32 Meg x 4 x 8 banks) - 128 Meg x 8 (16 Meg x 8 x 8 banks) - 64 Meg x...