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MT47H64M16 Datasheet DDR2 SDRAM

Manufacturer: Micron Technology

Download the MT47H64M16 datasheet PDF. This datasheet also includes the MT47H256M4 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT47H256M4_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

Overview

DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks 1Gb: x4, x8, x16 DDR2.

Key Features

  • Features.
  • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
  • JEDEC-standard 1.8V I/O (SSTL_18-compatible).
  • Differential data strobe (DQS, DQS#) option.
  • 4n-bit prefetch architecture.
  • Duplicate output strobe (RDQS) option for x8.
  • DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CAS latency (CL).
  • Posted CAS additive latency (AL).
  • WRITE latency = READ latency - 1 tCK.

More Datasheets from Micron Technology

Part Number Description
MT47H64M4 (MT47HxxMx) DDR2 SDRAM
MT47H64M8 DDR2 SDRAM
MT47H128M4 DDR2 SDRAM
MT47H128M8 DDR2 SDRAM
MT47H16M16 (MT47HxxMx) DDR2 SDRAM
MT47H1G4 TwinDie DDR2 SDRAM
MT47H256M4 DDR2 SDRAM
MT47H32M16 DDR2 SDRAM
MT47H32M8 (MT47HxxMx) DDR2 SDRAM
MT47H512M8 TwinDie DDR2 SDRAM