MT47H64M16 - DDR2 SDRAM

This page provides the datasheet information for the MT47H64M16, a member of the MT47H256M4 DDR2 SDRAM family.

Features

Features.
VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
JEDEC-standard 1.8V I/O (SSTL_18-compatible).
Differential data strobe (DQS, DQS#) option.
4n-bit prefetch architecture.
Duplicate output strobe (RDQS) option for x8.
DLL to align DQ and DQS transitions with CK.
8 internal banks for concurrent operation.
Programmable CAS latency (CL).
Posted CAS additive latency (AL).
WRITE latency = READ latency - 1 tCK.

Micron Technology

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Datasheet Details

Part number	MT47H64M16
Manufacturer	Micron Technology
File Size	9.35 MB
Description	DDR2 SDRAM
Datasheet	MT47H64M16 Datasheet
Additional preview pages of the MT47H64M16 datasheet.

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Full PDF Text Transcription

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DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks 1Gb: x4, x8, x16 DDR2 SDRAM Features Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.

Published: Sep 7, 2007 |