MT5C128K8A1 sram equivalent, 128k x 8 sram.
* High speed: 12, 15, 20 and 25ns
* Multiple center power and ground pins for greater noise immunity
* Easy memory expansion with ?C/E and ?O/E options
* .
Micron offers chip enable (?C/E) and output enable (?OE / ) with this organization. This enhancement can place the outp.
The MT5C128K8A1 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high-speed, lowpower CMOS process. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. This device offers multiple ce.
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