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MT5C128K8A1 Datasheet 128K x 8 SRAM

Manufacturer: Micron Technology

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General Description

The MT5C128K8A1 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high-speed, lowpower CMOS process.

Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

This device offers multiple center power and ground pins for improved performance.

Overview

www.DataSheet4U.com SEMICONDUCTOR, INC.

MT5C128K8A1 REVOLUTIONARY PINOUT 128K x 8 SRAM.

Key Features

  • High speed: 12, 15, 20 and 25ns.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with ?C/E and ?O/E options.
  • Automatic ?C/E power down.
  • All inputs and outputs are TTL-compatible.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ± 10% power supply.
  • Fast ?O/E access times: 6, 8, 10 and 12ns 128K x 8 SRAM WITH SINGLE CHIP ENABLE,.

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