MT5C6401 Description
The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Micron offers chip enable (/C/E) with all organizations.
MT5C6401 Key Features
- High speed: 9, 10, 12, 15, 20 and 25ns
- High-performance, low-power, CMOS double-metal process
- Single +5V ±10% power supply
- Easy memory expansion with /C/E option
- All inputs and outputs are TTL-patible
- Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
- 2V data retention
- Temperature mercial Industrial Automotive Extended
- 9 -10 -12 -15 -20 -25
- Part Number Example: MT5C6401DJ-10 L