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MT5C6401 - 64K x 1 SRAM

General Description

The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process.

Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology.

Key Features

  • High speed: 9, 10, 12, 15, 20 and 25ns.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±10% power supply.
  • Easy memory expansion with /C/E option.
  • All inputs and outputs are TTL-compatible 64K x 1 SRAM PIN.

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