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MT5C6404 - 16K x 4 SRAM SRAM MEMORY ARRAY

General Description

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell.

Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.

Key Features

  • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns.
  • Battery Backup: 2V data retention.
  • High-performance, low-power CMOS double-metal process.
  • Single +5V (+10%) Power Supply.
  • Easy memory expansion with CE.
  • All inputs and outputs are TTL compatible.

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Datasheet Details

Part number MT5C6404
Manufacturer ASI
File Size 111.60 KB
Description 16K x 4 SRAM SRAM MEMORY ARRAY
Datasheet download datasheet MT5C6404 Datasheet

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MT5C6405 16K x 4 SRAM SRAM MEMORY ARRAY
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM Austin Semiconductor, Inc. 16K x 4 SRAM SRAM MEMORY ARRAY MT5C6404 PIN ASSIGNMENT (Top View) 22-Pin DIP (C) (300 MIL) A5 A6 A7 A8 A9 A10 A11 A12 A13 CE Vss 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 Vcc A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 DQ1 WE AVAILABLE AS MILITARY SPECIFICATIONS • • • SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES • Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns • Battery Backup: 2V data retention • High-performance, low-power CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE • All inputs and outputs are TTL compatible GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell.