MT5C6408
Overview
The MT5C6408 is organized as a 8,192 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process.
- High speed: 9, 10, 12, 15,20 and 25ns
- High-performance, low-power, CMOS double-metal process
- Single +5V ±10% power supply
- Easy memory expansion with CEl, CE2 and OE options
- All inputs and outputs are TTL-compatible OPTIONS
- Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access MARKING -9 -10 -12 -15 -20 -25
- Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
- 2V data retention None DJ L
- Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT
- Part Number Example: MT5C6408DJ-15 AT NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available. Please contactthe factory for availability of specific part number combinations.
