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MT5C6408 - 8K x 8 SRAM

General Description

The MT5C6408 is organized as a 8,192 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process.

Key Features

  • High speed: 9, 10, 12, 15,20 and 25ns.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±10% power supply.
  • Easy memory expansion with CEl, CE2 and OE options.
  • All inputs and outputs are TTL-compatible.

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📁 Similar Datasheet

Part Number Description Manufacturer
MT5C6408 8K x 8 SRAM ASI
MT5C6401 64K x 1 SRAM Micron Technology
MT5C6401 64K x 1 SRAM SRAM MEMORY ARRAY Austin Semiconductor
MT5C6404 16K x 4 SRAM SRAM MEMORY ARRAY ASI
MT5C6405 16K x 4 SRAM SRAM MEMORY ARRAY ASI

Other Datasheets by Micron Technology

Part Number Description
MT5C6404 16K x 4 SRAM
MT5C6405 16K x 4 SRAM
MT5C64K16A1 64K x 16 SRAM
MT5C1001 1 Meg x 1 SRAM
MT5C1005 256K x 4 SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRAM FEATURES • High speed: 9, 10, 12, 15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CEl, CE2 and OE options • All inputs and outputs are TTL-compatible OPTIONS • Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access MARKING -9 -10 -12 -15 -20 -25 • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) • 2V data retention None DJ L • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C6408DJ-15 AT NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.