MT5C6408 - 8K x 8 SRAM

Datasheet Summary

Description

The MT5C6408 is organized as a 8,192 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process.

Features

High speed: 9, 10, 12, 15,20 and 25ns.
High-performance, low-power, CMOS double-metal process.
Single +5V ±10% power supply.
Easy memory expansion with CEl, CE2 and OE options.
All inputs and outputs are TTL-compatible.

Micron

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Datasheet Details

Part number	MT5C6408
Manufacturer	Micron
File Size	530.98 KB
Description	8K x 8 SRAM
Datasheet	MT5C6408 Datasheet
Additional preview pages of the MT5C6408 datasheet.

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Full PDF Text Transcription

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SRAM FEATURES • High speed: 9, 10, 12, 15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CEl, CE2 and OE options • All inputs and outputs are TTL-compatible OPTIONS • Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access MARKING -9 -10 -12 -15 -20 -25 • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) • 2V data retention None DJ L • Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C) None IT AT XT • Part Number Example: MT5C6408DJ-15 AT NOTE: Not all combinations of operating temperature, speed, data retention and low power are necessarily available.

Published: Apr 28, 2019 |