MT5C6401 Overview
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations.
MT5C6401 Key Features
- Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
- Battery Backup: 2V data retention
- High-performance, low-power CMOS double-metal process
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE
- All inputs and outputs are TTL patible
