MT5C6401 Datasheet | Austin Semiconductor

SRAM Austin Semiconductor, Inc. 64K x 1 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT (Top View) 22-Pin DIP (C) (300 MIL) A0 A1 A2 A3 A4 A5 A6 A7 Q WE Vss 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 Vcc A15 A14 A13 A12 A11 A10 A9 A8 D CE AVAILABLE AS MILITARY SPECIFICATIONS - - SMD 5962-86015 MIL-STD-883 Features - Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns - Battery Backup: 2V data retention - High-performance, low-power CMOS double-metal process - Single +5V (+10%) Power Supply - Easy memory expansion with CE - All inputs and outputs are TTL patible .. GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. The X1 configuration Features separate data input and output. Writing to these devices is acplished when write enable (WE) and CE inputs are both LOW. Reading is acplished when WE remains HIGH and CE goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL patible. OPTIONS - Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access - Package(s) Ceramic DIP (300 mil) MARKING -12 -15 -20 -25 -35 -45- -55- -70- No. 105 - Operating Temperature Ranges Industrial (-40o C to +85o C) IT Military (-55o C to +125o C) XT - 2V data retention/low power L - Electrical characteristics identical to those provided for the 35ns access devices. For more products and information please visit our web site at...