MT5C6405 Overview
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) and output enable (OE) capability.
MT5C6405 Key Features
- High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
- Battery Backup: 2V data retention
- High-performance, low-power CMOS double-metal process
- Single +5V (+10%) Power Supply
- Easy memory expansion with CE
- All inputs and outputs are TTL patible
- Package(s) Ceramic DIP (300 mil) Ceramic LCC
- 12 -15 -20 -25 -35 -45- -55- -70
MT5C6405 Applications
- Operating Temperature Ranges Industrial (-40oC to +85oC) IT Military (-55oC to +125oC) XT
