MT5C6401 sram equivalent, 64k x 1 sram.
* High speed: 9, 10, 12, 15, 20 and 25ns
* High-performance, low-power, CMOS double-metal process
* Single +5V ±10% power supply
* Easy memory expansion w.
Micron offers chip enable (/C/E) with all organizations. This enhancement can place the outputs in High-Z for additiona.
The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memo.
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