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0405SC-1000M Datasheet

Silicon Carbide SIT

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0405SC-1000M Rev F
0405SC-1000M
1000Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON
CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is
designed for use in High Power Amplifiers supporting applications such as UHF
Weather Radar and Long Range Tracking Radar. The device is an addition to
a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE
55ST FET
(Common Gate)
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Temperatures
Storage Temperature
Operating Junction Temperature
250V
-1V
-65 to +150°C
+250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Idss
Drain-Source Leakage Current VGS = -20V, VDG= 125V
Igss
Gate-Source Leakage Current VGS = -20V, VDS = 0V
θJC1
Thermal Resistance
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 250 mA, Freq = 406, 425, 450 MHz,
GPG
Common Gate Power Gain
Pout = 1000 W, Pulsed
8 8.5
dB
Pin
Input Power
Pulse Width = 300us, DF = 10%
140 155 W
ηd
Drain Efficiency
F = 450 MHz, Pout =1000W
50
%
ψ
Load Mismatch
F = 406 MHz, Pout = 1000W
10:1
Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 180 W
1100
W
Vgs
Gate source Voltage
Set for Idq(ave) = 150mA
3.0
10.0 Volts
Rev F May 2010
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.


  Microsemi Electronic Components Datasheet  

0405SC-1000M Datasheet

Silicon Carbide SIT

No Preview Available !

0405SC-1000M Rev F
0405SC-1000M
Typical RF Performance Curve
0405SC-1000M: Gain & Pout
gain
Pout
300us 10% 125V
12
1200
1100
10
1000
900
8
800
700
6
600
500
4
400
300
2
200
100
0
0
10
20
40
82
132 164 181
Pin(W)
drain efficiency
60%
55%
50%
45%
40%
35%
30%
25%
20%
15%
10%
10
20
0405SC-1000M: drain efficiency
300us 10% 125V
40
82
132
164
181
Pin(W)
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.


Part Number 0405SC-1000M
Description Silicon Carbide SIT
Maker Microsemi
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0405SC-1000M Datasheet PDF






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