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2N1722 Microsemi (https://www.microsemi.com/) NPN SILICON HIGH POWER TRANSISTOR

Description TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (...
Features er-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 Free Datasheet http://www.datasheet4u.com/ 2N1722, 2N1724 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 2.0...

Datasheet PDF File 2N1722 Datasheet - 82.86KB

2N1722  






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