Microsemi 2N1724
NPN SILICON HIGH POWER TRANSISTOR
| Part No. | 2N1724 |
|---|---|
| Datasheet | 2N1724 Download |
| Manufacturer |  Microsemi |
| Description | NPN SILICON HIGH POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 C TO-53* 2N1722 *See Appendix A for Package OutlineELECTRICAL CHARACTERISTICS
Characteristics Symbol V(BR)CEO V(BR)EBO ICES ICBO IEBO Min. 80 10 300 5.0 400 Max. Unit Vdc Vdc µAdc mAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 10 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc Collector-Base Cutoff Current VCB = 175 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 Free Datasheet 2N1722, 2N1724 JAN SERIESELECTRICAL CHARACTERISTICS
(con’t) Characteristics Symbol Min.