Datasheet Summary
2N 1724 (SILICON) 2N1725
CASE 9
(TO-61)
NPN silicon power transistors designed for switching and amplifier applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Power Dissipation Thermal Resistance I Junction to Case Junction Operating Temperature Range
Symbol
VCB VCE VEB IC PD UJC TJ
Value
120 80 10 5_0 117 1.5 -65 to +200
Unit
Vdc Vdc Vdc Adc Watts °C/W °c
2-213
2N1724, 2N1725 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max
Emitter-Base Cutoff Current
(VEB =9 Vdc) (VEB =10 Vdc)
Collector-Emitter Cutoff Current
(VCE =60 Vdc, VBE =0)...
