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2N1724, 2N1722 Datasheet - Microsemi

2N1724 - NPN SILICON HIGH POWER TRANSISTOR

TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA betwee.

2N1722_Microsemi.pdf

2N1724 Datasheet Preview — This datasheet PDF includes multiple part numbers: 2N1724, 2N1722. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

2N1724, 2N1722

Manufacturer:

Microsemi ↗

File Size:

82.86 KB

Description:

Npn silicon high power transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N1724, 2N1722.
Please refer to the document for exact specifications by model.

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2N1722 NPN SILICON HIGH POWER TRANSISTOR Microsemi