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2N1724 - NPN SILICON HIGH POWER TRANSISTOR

This page provides the datasheet information for the 2N1724, a member of the 2N1722 NPN SILICON HIGH POWER TRANSISTOR family.

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Datasheet Details

Part number 2N1724
Manufacturer Microsemi
File Size 82.86 KB
Description NPN SILICON HIGH POWER TRANSISTOR
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Full PDF Text Transcription

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TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 C TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol V(BR)CEO V(BR)EBO ICES ICBO IEBO Min. 80 10 300 5.0 400 Max.
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