Datasheet4U Logo Datasheet4U.com

2N1724 - NPN SILICON HIGH POWER TRANSISTOR

Download the 2N1724 datasheet PDF. This datasheet also covers the 2N1722 variant, as both devices belong to the same npn silicon high power transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N1722_Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices 2N1722 2N1724 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Value 80 175 10 5.0 3.0 50 175 -65 to +200 Units Vdc Vdc Vdc Adc W W 0 @ TA = +250C(1) @ TC = +1000C (2) TOP, Temperature Range: Operating Storage Junction Tstg 1) Derate linearly 20 mW/0C for TA between +250C and +1750C 2) Derate linearly 666 mW/0C for TC between +1000C and +1750C TO-61* 2N1724 C TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol V(BR)CEO V(BR)EBO ICES ICBO IEBO Min. 80 10 300 5.0 400 Max.