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TECHNICAL DATA SHEET
RADIATION HARDENED
NPN-SWITCHIN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/251
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Con’t)
Parameters / Test Conditions
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 60Vdc
VCB = 60Vdc
VCB = 75Vdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
Symbol
ICBO
ON CHARACTERTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218
2N2219
2N2218A; 2N2218AL
2N2219A; 2N2219AL
2N2218; A; AL
2N2219; A; AL
hFE
IC = 500mAdc, VCE = 10Vdc
2N2218; A; AL
2N2219; A; AL
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
VCE(sat)
Min.
20
35
30
50
25
50
35
75
35
75
40
100
40
100
20
30
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
2N2218; 2N2219
2N2218A; 2N2219A; L
2N2218; 2N2219
2N2218A; 2N2219A; L
VBE(sat)
0.6
0.6
Max.
10
10
10
10
Unit
ηAdc
μAdc
150
325
150
325
120
300
0.4
0.3
Vdc
1.6
1.0
1.3
1.2
Vdc
2.6
2.0
T4-LDS-0090 Rev. 1 (082523)
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