2N3849 - NPN Transistor

Microsemi

Datasheet Details

Part number	2N3849
Manufacturer	Microsemi
File Size	199.17 KB
Description	NPN Transistor
Datasheet	2N3849 Datasheet
Additional preview pages of the 2N3849 datasheet.

📁 Similar Datasheet

2N3846 - (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
2N3847 - (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
2N3848 - NPN Transistor (SSDI)
2N380 - PNP Transistor (Motorola)
2N3800 - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3800A - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3800DCSM - Dual Bipolar PNP Devices (Semelab Plc)
2N3801 - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3801A - DUAL PNP SILICON ANNULAR TRANSISTORS (Motorola)
2N3801DCSM - Dual Bipolar PNP Devices (Semelab Plc)

Other Datasheets by Microsemi

2N3814S - NPN MEDUIM POWER SILICON TRANSISTOR
2N3867S - Silicon PNP Power Transistors
2N3868S - Silicon PNP Power Transistors
2N3878 - NPN Transistor
2N3879 - NPN POWER SILICON TRANSISTOR
2N3019 - LOW POWER NPN SILICON TRANSISTOR
2N3019S - LOW POWER NPN SILICON TRANSISTOR
2N3057A - LOW POWER NPN SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text

ISCFdÈÙËb ÙËb text/html About keyword search: News Contact Employment Site part number search: Home 2N3849 (#23145) RFQ/Sample NPN Transistor Division Lawrence Mil -Spec (none) Shipping (none) Datasheet Qual Data (none) Contact Microsemi Package TO-63(STD) Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open Symbol Power IC BV(CBO) VCEO BVEBO Max Unit 150 W 20 A 400 V 300 V 10 V Electrical Rating Symbol Min Typ Max Unit Collector Emitter Saturation Voltage (IB=2 mA, IC=15 mA, TA=25 ºC,300µ s pulse) VCE(sat) 1V DC Current Gain (IC=15 mA, TA=25 ºC,300µ s pulse) HFE 40 200 Privacy Policy | Site Map PPG Webex Port|aPl PG Extranet Login Avionics| Backlight

Published: Jul 6, 2017 |