2N3847 datasheet by Microsemi (now Microchip Technology).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3847 |
|---|---|
| Datasheet | 2N3847 2N3846 Datasheet (PDF) |
| File Size | 210.27 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR |
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0.5 TO-63 0 See Appendix A for Package Outline Characteristics Symbol Min. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| 2N3846 | (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR |
| 2N3810 | PNP SILICON DUAL TRANSISTOR |
| 2N3810L | PNP SILICON DUAL TRANSISTOR |
| 2N3810U | PNP SILICON DUAL TRANSISTOR |
| 2N3811 | PNP SILICON DUAL TRANSISTOR |
| 2N3811L | PNP SILICON DUAL TRANSISTOR |
| 2N3811U | PNP SILICON DUAL TRANSISTOR |
| 2N3821 | N-CHANNEL J-FET |
| 2N3822 | N-CHANNEL J-FET |
| 2N3823 | N-CHANNEL J-FET |
