2N3847 Description
0.5 TO-63 0 See Appendix A for Package Outline Characteristics Symbol Min. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.
2N3847 is (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR manufactured by Microsemi.
| Part Number | Description |
|---|---|
| 2N3846 | (2N3846 / 2N3847) NPN POWER SILICON TRANSISTOR |
| 2N3810 | PNP SILICON DUAL TRANSISTOR |
| 2N3810L | PNP SILICON DUAL TRANSISTOR |
| 2N3810U | PNP SILICON DUAL TRANSISTOR |
| 2N3811 | PNP SILICON DUAL TRANSISTOR |
0.5 TO-63 0 See Appendix A for Package Outline Characteristics Symbol Min. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; IB = 0 Collector-Emitter Cutoff Current VCE = 300 Vdc;.