2N3849
2N3849 is NPN Transistor manufactured by Microsemi.
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2N3849 (#23145)
RFQ/Sample
NPN Transistor
Division
Lawrence
Mil -Spec
(none)
Shipping
(none)
Datasheet Qual Data
(none) Contact Microsemi
Package TO-63(STD)
Maximum Electrical Rating Power Dissipation Collector Current Breakdown Voltage Collector -to-Base Voltage Collector to Emitter Open Voltage Emitter to Base Open
Symbol Power
IC BV(CBO)
VCEO BVEBO
Max Unit 150 W 20 A 400 V 300 V 10 V
Electrical Rating
Symbol Min Typ Max Unit
Collector Emitter Saturation Voltage
(IB=2 m A, IC=15 m A, TA=25 ºC,300µ s pulse) VCE(sat)
1V
DC Current Gain
(IC=15 m A, TA=25 ºC,300µ s pulse)
HFE 40
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