Microsemi 2N3879
NPN POWER SILICON TRANSISTOR
2N3879 Specifications
- Package : TO-66
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 7A
- Collector Base Voltage : 120V
- Collector Emitter Voltage : 75V
- Max Power Dissipation : 35W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N3879 |
|---|---|
| Datasheet | 2N3879 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 200 mW/0C for TC > 250C Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Value 75 120 7.0 5.0 7.0 35 -65 to +200 Symbol RθJC Max. 5.0ELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc V(BR)CEO Collector-Emitter Cutoff Current VCE = 50 Vdc ICEO Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc ICEX Collector-Base Cutoff Current VCB = 120 Vdc ICBO Emitter-Base Cutoff Current VEB = 7.0 Vdc IEBO Unit Vdc Vdc Vdc Adc Adc W 0C Unit 0C/