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2N3879
NPN Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/526 • TO-66 (TO-213AA) Package • Ideal for High Speed Switching and Linear Amplifier
Applications
Rev. V4
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current
IC = 200 mA dc VCE = 50 V dc VCE = 100 Vdc, VBE = 1.5 V dc VCB = 120 V dc VEB = 7 V dc
V(BR)CEO V dc
75
ICEO mA dc —
ICEX1 µA dc
—
ICBO µA dc
—
IEBO mA dc —
Forward Current Transfer Ratio Collector - Emitter Saturation Voltage
IC = 0.5 A dc, VCE = 5 V dc IC = 4.0 A dc, VCE = 5 V dc IC = 4.