| Part Number | 2N3879 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi. ning Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A hFE-1* DC Current Gain IC= 4A; VCE= 2V hFE-2* DC Current Gain IC= 4A; VCE= 5V hFE-3* DC Curre. |