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  Microsemi Electronic Components Datasheet  

2N3902 Datasheet

NPN HIGH POWER SILICON TRANSISTOR

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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/371
Devices
2N3902
2N5157
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +250C (1)
@ TC = +750C (2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/0C for TA > +250C
2) Derate linearly 0.8 W/0C for TC > +750C
Symbol
VCEO
VEBO
VCBO
IB
IC
PT
Tj, Tstg
Symbol
RθJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 325 Vdc
2N3902
VCE = 400 Vdc
Collector-Emitter Cutoff Current
2N5157
VBE = 1.5 Vdc; VCE = 700 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
2N3902
VEB = 6.0 Vdc
ON CHARACTERISTICS(3)
2N5157
Base-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N3902 2N5157
400 500
5.0 6.0
700
2.0
3.5
5.0
100
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0C
Max.
1.25
Unit
0C/W
TO-3 (TO-204AA)*
Symbol
*See Appendix A for Package
Outline
Min. Max.
Unit
ICEO 250 µAdc
250
ICEX 500 µAdc
IEBO 200 µAdc
200
VBE(sat)
VCE(sat)
1.5 Vdc
2.0
0.8 Vdc
2.5
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N3902 Datasheet

NPN HIGH POWER SILICON TRANSISTOR

No Preview Available !

2N3902, 2N5157 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS(3) (con’t)
Symbol
Min. Max.
Forward-Current Transfer Ratio
IC = 0.5 Adc; VCE = 5.0 Vdc
25
IC = 1.0 Adc; VCE = 5.0 Vdc
IC = 2.5 Adc; VCE = 5.0 Vdc
hFE 30 90
10
IC = 3.5 Adc; VCE = 5.0 Vdc
Collector-Emitter Sustaining Voltage
5
IC = 100 mAdc
2N3902
2N5157
VCEO(sus)
325
400
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 0.2 Adc; VCE = 10 Vdc, f = 1 MHz
Output Capacitance
VCB = 10 Vdc; IE = 0, 100 kHz f 1.0 MHz
hfe
Cobo
2.5 25
250
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 125 Vdc; IC = 1.0 Adc; IB1= 0.1 Adc
Turn-Off Time
VCC = 125 Vdc; IC = 1.0 Adc; IB1 = 0.1 Adc; -IB2 = 0.50 Adc
ton
toff
0.8
1.7
SAFE OPERATING AREA
DC Tests (continuous)
TC = +250C; t 1.0 s (See Figure 3 of MIL-PRF-19500/371)
Test 1
VCE = 28.6 Vdc, IC = 3.5 Adc
Test 2
VCE = 70 Vdc, IC = 1.43 Adc
Test 3
VCE = 325 Vdc, IC = 55 mAdc
2N3902
VCE = 400 Vdc, IC = 35 mAdc
Switching Tests
2N5157
Load condition C (unclamped inductive load)
TC = 250C; duty cycle 10%; RS = 0.1 (See Figure 4 of MIL-PRF-19500/371)
Test 1
tP = approximately 3 ms (vary to obtain IC); RBB1 = 20 ; VBB1 = 10 Vdc; RBB2 = 3 k;
VBB2 = 1.5 Vdc; VCC = 50 Vdc; IC = 3.5 Adc; L = 60 mH; R = 3 ; RL 14.
Test 2
tP = approximately 3 ms (vary to obtain IC); RBB1 = 100 ; VBB1 = 10 Vdc; RBB2 = 3 k;
VBB2 = 1.5 Vdc; IC = 0.6 Adc VCC = 50 Vdc; L = 200 mH; R = 8 ; RL 83.
Switching Tests
Load condition (clamped inductive load)
TC = +250C; duty cycle 10%. (See Figure 5 of MIL-PRF-19500/371)
Test 1
tP = approximately 30 ms (vary to obtain IC); RS = 0.1 ; RBB1 = 20 ; VBB1 = 10 Vdc; RBB2 = 100 ;
VBB2 = 1.5 Vdc; VCC = 50 Vdc; IC = 3.5 Adc; L = 60 mH; R = 3 ; RL 0.
(A suitable clamping circuit or diode can be used.)
Clamp Voltage = 400 +0, -5 Vdc
2N3902
Clamp Voltage = 500 +0, -5 Vdc
2N5157
(Clamped voltage must be reached)
3.) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Unit
Vdc
pF
µs
µs
120101
Page 2 of 2


Part Number 2N3902
Description NPN HIGH POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 2 Pages
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