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  Microsemi Electronic Components Datasheet  

2N6032 Datasheet

NPN POWER SILICON TRANSISTOR

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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices
2N6032
2N6033
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6032 2N6033
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Emitter-Base Voltage
Base Current
Total Power Dissipation
@ TC = +250C (1)
VCEO
VCBO
IC
VEBO
IB
PT
90 120
120 150
50 40
7.0
10
140
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Top, Tstg
-65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C
1.25
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6032
2N6033
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N6032
2N6033
V(BR)CER
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, VEB = 1.5 Vdc
2N6032
2N6033
V(BR)CEX
Collector-Base Cutoff Current
VCB = 120 Vdc
2N6032
ICBO
VCB = 150 Vdc
Collector-Emitter Cutoff Current
2N6033
VCE = 110 Vdc, VBE =-1.5 Vdc
2N6032
ICEX
VCE = 135 Vdc, VBE =-1.5 Vdc
2N6033
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Units
Vdc
Vdc
Adc
Vdc
Adc
W
0C
Unit
0C/W
Min.
90
120
110
140
120
150
TO-3*
(TO-204AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
25 mAdc
25
12 mAdc
10
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N6032 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

2N6032, 2N6033, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
OFF CHARACTERISTICS (con’t)
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50 Adc, VCE = 2.6 Vdc
2N6032
IC = 40 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
2N6033
IC = 50 Adc, IB = 5.0 Adc
2N6032
IC = 40 Adc, IB = 4.0 Adc
Base-Emitter Saturation Voltage
2N6033
IC = 50 Adc, IB = 5.0 Adc
2N6032
IC = 40 Adc, IB = 4.0 Adc
2N6033
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc
2N6032
VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc
Turn-Off Time
2N6033
VCC = 30 Vdc±2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc 2N6032
VCC = 30 Vdc±2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6033
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 2.8 Vdc, IC = 50 Adc
Test 2
2N6032
VCE = 3.5 Vdc, IC = 40 Adc
Test 3
2N6033
VCE = 24 Vdc, IC = 5.8 Adc
Test 4
All Types
VCE = 40 Vdc, IC = 0.9 Adc
Test 5
All Types
VCE = 90 Vdc, IC = 0.18 Adc
Test 6
2N6032
VCE = 120 Vdc, IC = 0.1 Adc
2N6033
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
IEBO
ICEO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
Min. Max. Unit
10 mAdc
10 mAdc
10 50
10 50
1.3 Vdc
1.0
2.0 Vdc
2.0
10 40
1,000
pF
0.5 µs
0.5
2.0 µs
2.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N6032
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 2 Pages
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