Datasheet Details
| Part number | 2N6032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.66 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6032-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N6032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.66 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6032-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 140 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6032 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=200mA ICBO Collector-Base Cutoff Current VCB= 120V ICEO Collector-Emitter Cutoff Current VCB= 80V IEBO Emitter-Base Cutoff Current VEB= 7V VCE(sat) Collector-Emitter Saturation Voltage IC= 50A;
IB= 5A VBE(sat) Base-Emitter Saturation Voltage IC= 50A;
IB= 5A hFE DC Current Gain IC= 50A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6032 | NPN High Power Silicon Transistor | VPT |
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2N6032 | NPN POWER SILICON TRANSISTOR | Microsemi |
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2N6032 | Bipolar NPN Device | Seme LAB |
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