Datasheet Details
| Part number | 2N6036 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.89 KB |
| Description | PNP Transistor |
| Datasheet | 2N6036-INCHANGE.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor.
| Part number | 2N6036 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 183.89 KB |
| Description | PNP Transistor |
| Datasheet | 2N6036-INCHANGE.pdf |
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·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·Complement to Type 2N6039 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -8 IB Base Current -0.1 PC Collector Power Dissipation TC=25℃ 40 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.3 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A;
Compare 2N6036 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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