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  Microsemi Electronic Components Datasheet  

2N6274 Datasheet

NPN POWER SILICON TRANSISTOR

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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/514
DEVICES
2N6274 2N6277
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Condition
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +25°C (1)
@ TC = +100°C (2)
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IB
IC
PT
Tj , Tstg
2N6274 2N6277
100 150
120 180
6.0 6.0
20 20
50 50
250
143
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal resistance, Junction-to-Case
Symbol
RθJC
Note: 1) Derate linearly 1.43 W/°C between TC = +25°C and TC = 200°C
Max
0.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS (1)
Symbol Min.
Max.
Collector-Emitter Breakdown Voltage
IC = 50mAdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
VCE = 75Vdc
Collector-Emitter Cutoff Current
VCE = 120Vdc, VBE = -1.5Vdc
VCE = 180Vdc, VBE = -1.5Vdc
Collector-Base Cutoff Current
VCB = 120Vdc
VCB = 180Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
2N6274
2N6277
V(BR)CEO
ICEO
ICEX
ICBO
IEBO
100
150
50
50
10
10
10
10
100
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
TO-3 (TO-204AE)
T4-LDS-0163 Rev. 1 (100546)
Page 1 of 3


  Microsemi Electronic Components Datasheet  

2N6274 Datasheet

NPN POWER SILICON TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 1.0Adc, VCE = 4.0Vdc
IC = 20Adc, VCE = 4.0Vdc
IC = 50Adc, VCE = 4.0Vdc
Symbol
hFE
Collector-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
IC = 50Adc, IB = 10Adc
Base-Emitter Saturation Voltage
IC = 20Adc, IB = 2.0Adc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit, Forward
Current Transfer Ratio
IC = 1.0Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
VCB = 10Vdc, IE = 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
VCC = 80Vdc; IC = 20Adc; IB = 2.0Adc
Turn-Off Time
VCC = 80Vdc ; IC = 20Adc; IB1 = -IB2 = 2.0Adc
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 5.0Vdc, IC = 50Adc
Test 2
VCE = 8.6Vdc, IC = 165mAdc
Test 3
VCE = 80Vdc, IC = 29mAdc
Test 4
VCE = 120Vdc, IC = 110mAdc
All Types
All Types
2N6274
2N6277
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%
Symbol
|hfe|
Cobo
Symbol
ton
toff
Min.
50
30
10
Min.
3.0
Min.
Max.
Unit
120
1.0
3.0
Vdc
1.8 Vdc
Max.
12
600
Unit
pF
Max.
0.5
1.05
Unit
μs
μs
T4-LDS-0163 Rev. 1 (100546)
Page 2 of 3


Part Number 2N6274
Description NPN POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 3 Pages
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