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2N6274, 2N6277
NPN High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/514 • TO-3 (TO-204AA) Package • Designed for Use in Hi-Reliability Power Amplifier and
Switching Circuit Applications
Rev. V3
Electrical Characteristics (TC = +25oC unless otherwise specified)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage
IC = 50 mA dc, 2N6274 IC = 50 mA dc, 2N6277
V(BR)CEO V dc
100 150
—
Collector - Base Cutoff Current
VCB = 120 V dc, 2N6274 VCB = 180 V dc, 2N6277
ICBO µA dc
—
10 10
Emitter - Base Cutoff Current
VEB = 6.0 V dc
IEBO µA dc
—
100
Collector - Emitter Cutoff Current
VCE = 120 V dc, VBE = -1.5 V dc, 2N6274 VCE = 180 V dc, VBE = -1.