VPT 2N6277
NPN High Power Silicon Transistor
2N6277 Specifications
- Package : TO-3
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 50A
- Collector Base Voltage : 180V
- Collector Emitter Voltage : 150V
- Max Power Dissipation : 250W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N6277 |
|---|---|
| Datasheet | 2N6277 Download |
| Manufacturer |  VPT |
| Description | NPN High Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/514● TO-3 (TO-204AA) Package
● Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit
APPLICATIONS
Rev. V3ELECTRICAL CHARACTERISTICS
(TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 50 mA dc, 2N6274 IC = 50 mA dc, 2N6277 V(BR)CEO V dc 100 150 — Collector - Base Cutoff Current VCB = 120 V dc, 2N6274 VCB = 180 V dc, 2N6277 ICBO µA dc — 10 10 Emitter - Base Cutoff Current VEB = 6.0 V dc IEBO µA dc — 100 Collector - Emitter Cutoff Current VCE = 120 V dc, VBE = -1.5 V dc, 2N6274 VCE = 180 V dc, VBE = -1.5 V dc, 2N6277 ICEX1 µA dc — 10 10 Collector - Emitter Cutoff Current VCE = 50 V dc, 2N6274 VCE = 75 V dc, 2N6277 ICEO µA dc — 50 50 Forward Current Transfer Ratio VCE = 4.0 V dc; IC = 1.0 A dc VCE = 4.0 V dc; IC = 20 A dc VCE = 4.0 V dc ; IC = 50 A dc 50 hFE - 30 120 10 Collector - Emitter Saturation Voltage I IC = 20 A dc; IB =...
