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2N6277 - NPN High Power Silicon Transistor

Download the 2N6277 datasheet PDF. This datasheet also covers the 2N6274 variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/514.
  • TO-3 (TO-204AA) Package.
  • Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N6274-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N6277
Manufacturer VPT
File Size 376.90 KB
Description NPN High Power Silicon Transistor
Datasheet download datasheet 2N6277 Datasheet

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Other Datasheets by VPT

Part Number Description
2N6274 NPN High Power Silicon Transistor
2N6211 PNP High Power Transistor
2N6212 PNP High Power Transistor
2N6213 PNP High Power Transistor
2N6213A PNP High Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N6274, 2N6277 NPN High Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/514 • TO-3 (TO-204AA) Package • Designed for Use in Hi-Reliability Power Amplifier and Switching Circuit Applications Rev. V3 Electrical Characteristics (TC = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = 50 mA dc, 2N6274 IC = 50 mA dc, 2N6277 V(BR)CEO V dc 100 150 — Collector - Base Cutoff Current VCB = 120 V dc, 2N6274 VCB = 180 V dc, 2N6277 ICBO µA dc — 10 10 Emitter - Base Cutoff Current VEB = 6.0 V dc IEBO µA dc — 100 Collector - Emitter Cutoff Current VCE = 120 V dc, VBE = -1.5 V dc, 2N6274 VCE = 180 V dc, VBE = -1.