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2N6278

Manufacturer: Inchange Semiconductor

2N6278 datasheet by Inchange Semiconductor.

2N6278 datasheet preview

2N6278 Datasheet Details

Part number 2N6278
Datasheet 2N6278-INCHANGE.pdf
File Size 222.88 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
2N6278 page 2

2N6278 Overview

·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6278 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 50V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter...

2N6278 from other manufacturers

View 2N6278 datasheet index

Brand Logo Part Number Description Other Manufacturers
ETC 2N6278 HIGH-POWER NPN SILICON TRANSISTORS ETC
Seme LAB Logo 2N6278 Bipolar NPN Device Seme LAB
Inchange Semiconductor logo - Manufacturer

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