2N6276 datasheet by Inchange Semiconductor.
| Part number | 2N6276 |
|---|---|
| Datasheet | 2N6276-INCHANGE.pdf |
| File Size | 214.29 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6276 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage Ic=50mA IEBO Emitter-Base Cutoff Current VBE=6V ICEO Collector-Emitter Cutoff Current VCE= 160V VCE(sat) Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat) Base-Emitter Saturation...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6276 | Bipolar NPN Device | Seme LAB |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6274 | Silicon NPN Power Transistor |
| 2N6275 | Silicon NPN Power Transistor |
| 2N6278 | Silicon NPN Power Transistor |
| 2N6212 | PNP Transistor |
| 2N6216 | NPN Transistor |
| 2N6217 | NPN Transistor |
| 2N6280 | Silicon NPN Power Transistor |
| 2N6281 | Silicon NPN Power Transistor |
| 2N6282 | NPN Transistor |
| 2N6283 | NPN Transistor |
