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  Microsemi Electronic Components Datasheet  

2N918UB Datasheet

NPN LOW POWER SILICON TRANSISTOR

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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/301
2N918 2N918UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top & Tstg
Note: 1) Derate linearly 1.14mW/°C above TA > 25°C
Value
15
30
3.0
50
200
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 3mAdc
Collector-Base Cutoff Current
VCB = 30Vdc
VCB = 25Vdc
VCB = 25Vdc; TA = +150°C
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 2.5Vdc
Forward-Current Transfer Ratio
IC = 0.5mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 3.0mAdc, VCE = 1.0Vdc; TA = -55°C
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
Base-Emitter Voltage
IC = 10mAdc, IB = 1.0mAdc
V(BR)CEO
15
Vdc
ICBO
1.0 µAdc
10 ηAdc
1.0 µAdc
IEBO 10 µAdc
10 ηAdc
hFE
VCE(sat)
VBE(sat)
10
20 200
20
10
0.4 Vdc
1.0 Vdc
TO-72
2N918
3 PIN
2N918UB
T4-LDS-0010 Rev. 3 (101342)
Page 1 of 4


  Microsemi Electronic Components Datasheet  

2N918UB Datasheet

NPN LOW POWER SILICON TRANSISTOR

No Preview Available !

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Short-Circuit - Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz
Symbol
|hfe|
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz f 1.0MHz
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz
Cobo1
Cobo2
Cibo
NF
Gpe
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz
Rb’CC
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f 500MHz
Po
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz
n
NOTES:
(1) For more detail see MIL-PRF-19500/301
Min.
6.0
15
30
25
Max.
18
3.0
1.7
2.0
6.0
25
Unit
pF
pF
dB
dB
ps
mW
%
T4-LDS-0010 Rev. 3 (101342)
Page 2 of 4


Part Number 2N918UB
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 4 Pages
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