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2N918UB - NPN LOW POWER SILICON TRANSISTOR

Download the 2N918UB datasheet PDF. This datasheet also covers the 2N918 variant, as both devices belong to the same npn low power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N918-Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 DEVICES NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/301 2N918 2N918UB LEVELS JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top & Tstg Note: 1) Derate linearly 1.14mW/°C above TA > 25°C Value 15 30 3.