Microsemi 2N918
NPN LOW POWER SILICON TRANSISTOR
| Part No. | 2N918 |
|---|---|
| Datasheet | 2N918 Download |
| Manufacturer |  Microsemi |
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C (1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IC PT Top & Tstg Note: 1) Derate linearly 1.14mW/°C above TA > 25°C Value 15 30 3.0 50 200 -65 to +200 Unit Vdc Vdc Vdc mAdc mW °CELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 3mAdc Collector-Base Cutoff C
