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2N918 Datasheet PDF

Advanced Semiconductor 2N918

The 2N918 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.
Part No. 2N918
Datasheet 2N918 Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
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2N918 datasheet page 1 preview

DESCRIPTION

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MAXIMUM RATINGS

IC 50 mA VCE PDISS TJ TSTG 15 V 300 mW @ TC = 25 OC 200 mW @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC PACKAGE STYLE TO-72 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 3.0 mA BVCBO ICBO BVEBO IC = 1.0 µA VCB = 15 V VCB = 15 V IE = 10 µA TA = 150 OC hFE VCE = 1.0 V IC = 3.0 mA VCE(SAT) IC = 10 mA IB = 1.0 mA VBE(SAT) IC = 10 mA IB = 1.0 mA NONE MINIMUM TYPICAL MAXIMUM 15 30 0.01 1.0 3.0 20 0.4 1.0 UNITS V V µA V --V V ft VCE = 10 V IC = 4.0 mA Cob VCB = 0 V VCB = 10 V Cib VEB = 0.5 V f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz 600 MHz 3.0 pF 1.7 2.0 pF NF VCE = 6.0 V IC = 1.0 mA Gpe VCB = 12 V IC = 6.0 mA Pout η VCB = 15 V IC = 8.0 mA f = 60 MHz f = 200 MHz f = 500 MHz 15 30 25 6.0 dB dB mW % A D V A N C E D S