2N918
2N918 is NPN SILICON ANNULAR TRANSISTORS manufactured by Motorola Semiconductor.
JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10
(TO-72 (TO-206AF)
AMPLIFIER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
- Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol v CEO v CBO v EBO
'C
Pd
TJ. Tstg
Value 15 30 3.0 50 200 1.14 300
-65 to + 200
Unit
Vdc
Vdc
Vdc m Adc m W m W/°C m W m W/°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage d C = 3.0 m Adc, Bl = 0)
Collector-Base Breakdown Voltage d C = 1.0/i Adc, El = 0)
Emitter-Base Breakdown Voltage (IE = 10 fi Adc, lc = 0)
Collector Cutoff Current
(Vcb = 15 Vdc, El = 0) (Vqb = 15 Vdc, l£ = 0, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain d C = 3.0 m Adc, V C e = 1-0 Vdc)
Collector-Emitter Saturation Voltage d C = 10...
