2N910 - NPN silicon annular transistors

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	2N910
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	115.63 KB
Description	NPN silicon annular transistors
Datasheet	2N910 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
2N911	NPN silicon annular transistors
2N914	SWITCHING TRANSISTOR
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2N916	NPN silicon annular transistor
2N918	NPN SILICON ANNULAR TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N910 (SILICON) 2N911 NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications. CASE 22 (TO-18) Collector connected to cIse MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) = ELECTRICAL CHARACTERISTICS (T.