Motorola 2N910
NPN silicon annular transistors
| Part No. | 2N910 |
|---|---|
| Datasheet | 2N910 Download |
| Manufacturer |  Motorola |
| Description | NPN silicon annular transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol Collector-Emitter Voltage VCEO Collector-Emitter Voltage Collector-Base Voltage VCER VCB Emitter-Base Voltage Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC Derate above 25°C Operating and Storage Junction Temperature Range VEB PD PD TJ' Tstg Value 60 eo 100 7.0 O. !5 2,86 1.8 0.975 10.3 -65 to +200 Unit Vdc Vdc Vdc Vdc Watt mW/PC Watt mW;oC °c 2-115 2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS
(T. 2S'C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage' (IC =30 mAde, IB =0) Collector-Emitter Sustaining Voltage' (IC = 100 mAde, RBE ~ 10 ohms) Collector-Base Breakdown Voltage (IC = 100 pAde, ~ =0) Emitter-Base Breakdown Voltage (~ = 100 pAde, IC = 0), Collector Cutoff Current (VCB =75 Vde, IE =0) (VCB =75 Vde, IE =0, ,TA = 150"C) Emitter Cutoff Current (VBE = 5.0 Vde, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = O. I mAde, VCE = 10 Vde) (IC = 10 mAde, VCE = 10 Vde) (IC = 10 mAde, VCE = 10 Vde, TA = -55"C) Collector-Emitter Saturation Voltage (IC = 10 mAde, IB = 1.