2N910
2N910 is NPN silicon annular transistors manufactured by Motorola Semiconductor.
2N910 (SILICON) 2N911
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO-18)
Collector connected to c Ise
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage Collector-Base Voltage
VCER VCB
Emitter-Base Voltage
Total Device Dis Sipation @ TA ;;: 25°C Derate above 2!5°C
Total Device Dissipation @ TC ::;: 25°C TC ;: 10Qo C
Derate above 25°C Operating and Storage Junction
Temperature Range
PD PD
TJ' Tstg
Value
60 eo
O. !5 2,86 1.8 0.975 10.3 -65 to +200
Unit
Vdc Vdc Vdc Vdc Watt m W/PC Watt m W;o C °c
2-115
2N910, 2N911 (Continued) = ELECTRICAL CHARACTERISTICS (T. 2S'C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage'
(IC =30 m Ade, IB =0)
Collector-Emitter Sustaining Voltage'
(IC = 100 m Ade, RBE ~ 10 ohms)
Collector-Base Breakdown Voltage
(IC = 100 p Ade, ~ =0)
Emitter-Base Breakdown...
