2N918 Overview
Key Specifications
Package: TO-72
Mount Type: Through Hole
Pins: 4
Max Operating Temp: 200 °C
Description
The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-72 CASE Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg ΘJA ΘJC 30 15 3.0 50 200 300 -65 to +200 87.5 58.3 UNITS V V V mA mW mW °C °C/W °C/W SYMBOL TEST CONDITIONS MIN ICBO VCB=15V ICBO VCB=15V, TA=150°C BVCBO IC=1.0μA 30 BVCEO IC=3.0mA 15 BVEBO IE=10μA 3.0 VCE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=1.
