2N918 Datasheet
2N918 Datasheet (STMicroelectronics)
STMicroelectronics
The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturatin.
FE fT
Parameter
Collector Cutoff Current (IE = 0)
Collector
*base Breakdown Voltage (IE = 0)
Collector
*emitter Sustaining Voltage (IB = 0)
Emitter
*base Breakdown Voltage (IC = 0)
Collector
*emitter Saturation Voltage
Base
*emitter Saturation Voltage
DC Current Gain
Transition Frequency
C EBO
Emitter.
2N918 Datasheet (Semicoa Semiconductor)
Semicoa Semiconductor
Semicoa Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N918J) • JANTX level (2N918JX) • JANTXV level (2N918JV) • QCI to the applicable level • 100% die visua.
* Hermetically sealed TO-72 metal can
* Also available in chip configuration
* Chip geometry 0003
* Reference document:
MIL-PRF-19500/301
Benefits
* Qualification Levels: JAN, JANTX, and JANTXV
* Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
15 Volts
30 Volts
3.
2N918 Datasheet (Motorola Semiconductor)
Motorola Semiconductor
2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 (TO-72 (TO-206AF) AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —C.
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2N918 Datasheet (Central Semiconductor)
Central Semiconductor
The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications. MARKING: FULL.
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