STMicroelectronics 2N918
The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.| Part No. | 2N918 |
|---|---|
| Datasheet | 2N918 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon Planar Epitaxial NPN transistor |
| Buy | Stock & Price |
DESCRIPTION
TO-72 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC Pto t Tstg, Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature January 1989 V al ue 30 15 3 50 200 300 – 65 to 200 Unit V V V mA mW mW °C 1/6 2N918 THERMAL DATA Rth j-cas e Thermal Resistance Junction-case R th j-amb Thermal Resistance Junction-ambient Max 584 °C/W Max 875 °C/WELECTRICAL CHARACTERISTICS
(Tamb = 25 °C unless otherwise specified) Symbol IC BO V (BR) CBO V CEO(s us ) V (BR) EBO V CE(s at) V BE(sat) hFE fT Parameter Collector Cutoff Current (IE = 0) Collector–base Breakdown Voltage (IE = 0) Collector–emitter Sustaining Voltage (IB = 0) Emitter–base Breakdown Voltage (IC = 0) Collector–emitter Saturation Voltage Base–emitter Saturation Voltage DC Current Gain Transition Frequency C EBO Emitter–base Capacitance CCBO Collector–base Capacitance NF Noise Figure Gpe Power Gain Po* Output Power η Collector Efficiency * See test circuit.
