2N918
2N918 is Silicon Planar Epitaxial NPN transistor manufactured by STMicroelectronics.
DESCRIPTION
The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.
TO-72
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO VCEO VEBO IC Pto t
Tstg, Tj
Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage and Junction Temperature
January 1989
V al ue 30 15 3 50 200 300
- 65 to 200
Unit V V V m A m W m W °C
1/6
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case R th j-amb Thermal Resistance Junction-ambient
Max 584 °C/W Max 875 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)
Symbol IC BO
V (BR) CBO
V CEO(s us )
V (BR) EBO
V CE(s at) V BE(sat) h FE f T
Parameter
Collector Cutoff Current (IE = 0)
Collector- base Breakdown Voltage (IE = 0)
Collector- emitter Sustaining Voltage (IB = 0)
Emitter- base Breakdown Voltage (IC = 0)
Collector- emitter Saturation Voltage
Base- emitter Saturation Voltage
DC Current Gain
Transition Frequency
C EBO
Emitter- base Capacitance
CCBO Collector- base Capacitance
NF Noise Figure Gpe Power Gain Po- Output Power
η Collector Efficiency
- See test circuit.
Test Conditions
VCB = 15 V VCB = 15 V
IC = 1...
