900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Microsemi Electronic Components Datasheet  

2N930 Datasheet

NPN LOW POWER SILICON TRANSISTOR

No Preview Available !

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/253
Devices
2N930
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.0 mW/0C above TA = +250C
2) Derate linearly 4.0 mW/0C above TC = +250C
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
Symbol
RθJC
Value
45
60
6.0
30
300
600
-55 to +200
Units
Vdc
Vdc
Vdc
mAdc
mW
0C
Max.
97
Unit
0C/W
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
V(BR)CEO
VCB = 60 Vdc
VCB = 45 Vdc
Emitter-Base Cutoff Current
ICBO
VEB = 6.0 Vdc
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc
Collector-Base Cutoff Current
VCE = 5.0 Vdc
IEBO
ICES
ICEO
Min. Max.
Unit
45 Vdc
µAdc
10 ηAdc
10
µAdc
10
5.0
ηAdc
2.0 ηAdc
2.0 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2


  Microsemi Electronic Components Datasheet  

2N930 Datasheet

NPN LOW POWER SILICON TRANSISTOR

No Preview Available !

2N930, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
Small-Signal Short-Circuit Output Admittance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz f 1.0 MHz
Noise Figure
VCE = 5 Vdc; IC = 10 µAdc; Rg =10k
Test 1: f = 100 Hz
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
hfe
hib
hob
Cobo
NF
Min. Max. Unit
100 300
150
600
1.0
0.6 1.0
Vdc
Vdc
1.5 6.0
150 600
25 32
1.0
8.0
5
3
3
µΩ
pF
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Part Number 2N930
Description NPN LOW POWER SILICON TRANSISTOR
Maker Microsemi
Total Page 2 Pages
PDF Download

2N930 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 2N930 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
Micro Electronics
2 2N930 NPN SILICON PLANAR TRANSISTORS
CDIL
3 2N930 Trans GP BJT NPN 45V 0.03A 3-Pin TO-18
New Jersey Semiconductor
4 2N930 NPN LOW POWER SILICON TRANSISTOR
Microsemi
5 2N930 BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS
Seme LAB
6 2N930 NPN SILICON TRANSISTORS
Central Semiconductor
7 2N930 AMPLIFIER TRANSISTOR
Motorola
8 2N930A NPN SILICON PLANAR TRANSISTORS
CDIL
9 2N930A NPN SILICON TRANSISTORS
Central Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy