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2N930 - AMPLIFIER TRANSISTOR

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol vCEO vCBO v EBO ' ic PD pd TJ' Tstg 2N930 2N930A 45 60 45 60 5.0 6.0 30 0.5 3.33 1.8 12 -65 to + 175 Unit Vdc Vdc Vdc mAdc W mW/°C Watt mW/°C °C 2N930,A JAN, JTX AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA) AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.