2N930 Datasheet PDF

MAXIMUM RATINGS

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol vCEO vCBO v EBO ' ic PD pd TJ' Tstg 2N930 2N930A 45 60 45 60 5.0 6.0 30 0.5 3.33 1.8 12 -65 to + 175 Unit Vdc Vdc Vdc mAdc W mW/°C Watt mW/°C °C 2N930,A JAN, JTX AVAILABLE CASE 22, STYLE 1 TO-18 (TO-206AA) AMPLIFIER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted.: Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) C(l = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage C(l = 10 jcAdc, l£ = 0) Emitter-Base Breakdown Voltage (l E = 10 tiAdc, Ic = 0) 2N930A 2N930 2N930A Collector Cutoff Current (VC E = 5.0 Vdc, Ib = 0) Collector Cutoff Current (VC B = 45 Vdc, Ie = 0) 2N930 2N930A Collector Cutoff Current (V C E = 45 Vdc, Vbe = 0) 2N93