2N930 Datasheet | Microsemi

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 m W/0C above TA = +250C 2) Derate linearly 4.0 m W/0C above TC = +250C Symbol VCEO VCBO VEBO IC TJ, Tstg Symbol RθJC Value 45 60 6.0 30 300 600 -55 to +200 Units Vdc Vdc Vdc m Adc m W 0C Max. 97 Unit 0C/W TO- 18- (TO-206AA) - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 m Adc Collector-Base Cutoff Current V(BR)CEO VCB = 60 Vdc VCB = 45 Vdc Emitter-Base Cutoff Current ICBO VEB = 6.0 Vdc...