Seme LAB 2N930
The 2N930 is designed for small general purpose and amplifier applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current PD Total Device Dissipation @ TA =25°C Derate above 25°C 45V 45V 5V 30mA 0.5W 350°C / W PD Total Device Dissipation @ TC =25°C Derate above 25°C 1.2W 146°C / W TSTG , TJ Operating and Storage Temperature Range –6| Part No. | 2N930 |
|---|---|
| Datasheet | 2N930 Download |
| Manufacturer |  Seme LAB |
| Description | BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) 5.33 (0.210) min. 4.32 (0.170) BIPOLAR NPN SILICON AMPLIFIER TRANSISTORSFEATURES
● SILICON PLANAR EPITAXIAL NPN TRANSISTOR● HERMETICALLY SEALED METAL PACKAGE
● CECC SCREENING OPTIONS AVAILABLE
● SPACE QUALITY LEVELS AVAILABLE 31 2 TO18 (TO-206AA) PACKAGE Underside View Pin 1 =Emitter Pin 2 = Base Pin 3 = Collector
APPLICATIONS
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