Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale an.

The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200  S pulse width, 20% duty factor across the 3100 to 3500 MHz band. This he.

313-2UYC

3130

3132

3134

31-01SURC

31-01USOC

31002A

3100400

3100400K

3101A

3101S-10xxx

3101S-6xxx

3101S-8821