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3135GN-280LV - S-Band Radar

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General Description

The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200  S pulse width, 20% duty factor across the 3100 to 3500 MHz band.

This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

Market Application – High Power S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 616 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 125 V -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C CASE OUTLINE 55-KP Common Source ELECTRICAL CHARACTERISTICS @ 25C Symbol Characteristics Test Conditions1 Min Typ Max Units Pout Output Power Pin=14.1W, Freq=3100,3300,3500 MHz 280 330 W Gp Power Gain Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7 dB D Drain Efficiency Dr Droop Pin=14.1W, Freq=3100,3300,3500 MHz Pin=14.1W, Freq=3100,3300,3500 MHz 50 58 0.2 0.5 % dB VSWR-T Өjc Load Mismatch Tolerance Pin=14.1W, Freq=3100 MHz 3:1 Thermal Resistance Pulse Width=200  S, Duty=20% .39 1 Bias Condition: Vdd=+50V, Idq=100mA constant current (Vgs= -2.0 ~ -4.5V typical) °C/W FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) Drain leakage current VgS = -8V, VD = 50V IG(Off) BVDSS Gate leakage current Drain-Source breakdown voltage VgS = -8V, VD = 0V Vgs =-8V, ID = 36mA 36 mA 6 mA 125 V For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information Frequency 3100 MHz 3300 MHz 3500 MHz 3135GN-280LV 280 Watts • 50 Volts • 200  s, 20% S-Band Radar 3100 - 3500 MHz TYPICAL BROAD BAND PERFORMACE DATA Pin Pout Id RL ηD

Overview

3135GN-280LV 280 Watts • 50 Volts • 200  s, 20% S-Band Radar 3100 - 3500 MHz.

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