3135GN-280LV
Description
The 3135GN-280LV is an internally matched, MON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20% duty factor across the 3100 to 3500 MHz band. This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
