APT31M100B2 Key Features
- Fast switching with low EMI/RFI
- Low RDS(on)
- Ultra low Crss for improved noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS pliant
- Part: APT31M100B2
- Manufacturer: Microsemi (official site)
- Size: 402.79 KB
Related Microsemi Datasheets
| Part Number | Description |
|---|---|
| APT31M100L | N-Channel MOSFET |
| APT31N80JC3 | Super Junction MOSFET |
| APT30DC60HJ | SiC Diode Full Bridge Power Module |
| APT30DF100HJ | Fast Diode Full Bridge Power Module |
| APT30DF120HJ | Fast Diode Full Bridge Power Module |
APT31M100B2 Description
APT31M100B2 APT31M100L 1000V, 31A, 0.40Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance.