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APT68GA60B Datasheet High Speed Pt IGBT

Manufacturer: Microsemi (now Microchip Technology)

Overview: APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency pared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the TO-247 APT68GA60S D3PAK poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B when switching at high frequency.

Key Features

  • Fast switching with low EMI.
  • Very Low Eoff for maximum efficiency.
  • Ultra low Cres for improved noise immunity.
  • Low conduction loss.
  • Low gate charge.
  • Increased intrinsic gate resistance for low EMI.
  • RoHS compliant.

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APT68GA60B Distributor