APT6010LFLL Datasheet | Microsemi

600V 54A 0.100Ω APT6010B2FLL APT6010LFLL APT6010B2FLL- APT6010LFLLG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. POWER MOS 7 R FREDFET B2FLL Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed and Qg. Power MOS with Power MOS 7® by significantly lowering 7® bines lower conduction and switching RDS(ON) losses along with exceptionally fast switching speeds inherent with Microsemi's patented metal gate structure. T-MAX™ TO-264 LFLL - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg - Increased Power Dissipation - Easier To Drive - Popular T-MAX™ or TO-264 Package - FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6010B2_LFLL UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Volts 54 Amps ±30 Volts ±40 Total Power Dissipation @ TC = 25°C Linear Derating...