APT6010LLL Datasheet | Advanced Power Technology

600V 54A 0.100W APT6010B2LL APT6010LLL B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM bines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. - Lower Input Capacitance - Lower Miller Capacitance - Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage T-MAX™ TO-264 - Increased Power Dissipation - Easier To Drive - Popular T-MAX™ or TO-264 Package All Ratings: TC = 25°C unless otherwise specified. APT6010 UNIT Volts Amps Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy L A C I N H C N E T IO E T C MA N A OR V AD INF 54 216 ±30 ±40 690 5.52 300 54 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/°C °C Amps m J -55 to 150 STATIC ELECTRICAL CHARACTERISTICS...