APTM100H45SCTG Description
APTM100H45SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application Motor control VBUS Switched Mode Power Supplies Uninterruptible Power Supplies CR1A CR3A.
APTM100H45SCTG Key Features
- Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF