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APTM100H45STG - MOSFET Power Module

Features

  • G1 S1 O UT1 OUT2 G3 S3.
  • Power MOS 7® MOSFETs CR 2A CR 4A - Low RDSon - Low input and Miller capacitance Q2 CR2B CR4B Q4 - Low gate charge G2 S2 NTC1 0/ VBU S G4 S4 N T C2 - Avalanche energy rated - Very rugged.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - Lead frames for power connections.
  • Internal thermistor for temperature monitoring.
  • High level of integration G3 S3 VB US S1 G1 G4 S4 0/VBUS S2 G2.

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Full PDF Text Transcription

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APTM100H45STG Full bridge Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Application VBUS • Motor control CR 1A CR3A • Switched Mode Power Supplies Q1 CR1B CR3B Q3 • Uninterruptible Power Supplies Features G1 S1 O UT1 OUT2 G3 S3 • Power MOS 7® MOSFETs CR 2A CR 4A - Low RDSon - Low input and Miller capacitance Q2 CR2B CR4B Q4 - Low gate charge G2 S2 NTC1 0/ VBU S G4 S4 N T C2 - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G3 S3 VB US S1 G1 G4 S4 0/VBUS S2 G2 OUT2 OUT1 NTC2 NTC1 Benefits • Outstanding performance at
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